Camalleri, M: search on Z-Library

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1

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

Severino, Andrea, Piluso, Nicolò, di Stefano, Maria Ausilia, Cordiano, Francesco, Camalleri, Marco, Arena, Giuseppe

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 2.28 MB

english, 2019

2

Kinetics and thermodynamics constraints in Pt gettering by P diffusion in Si

Coffa, S., Franco, G., Camalleri, C. M., Giraffa, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 415 KB

english, 1996

3

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate

Mangano, F., Caristia, L., Costa, N., Camalleri, M., Ravesi, S., Scalese, S., Bagiante, S., Privitera, V.

Year:

2007

Language:

english

File:

PDF, 975 KB

english, 2007

4

Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 148 KB

english, 2007

5

Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

6

Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate

F. Monforte, M. Camalleri, D. Calì, G. Currò, E. Fazio, F. Neri

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 190 KB

english, 2007

7

Efficiency and thermal stability of Pt gettering in crystalline Si

Cacciato, A., Camalleri, C. M., Franco, G., Raineri, V., Coffa, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 500 KB

english, 1996

8

Excimer laser annealing of shallow As and B doped layers

E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, V. Privitera, M. Camalleri, G. Fortunato, L. Mariucci

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 167 KB

english, 2004

9

The European answer to the integration issues of excimer laser annealing in MOS technology

V. Privitera, A. La Magna, G. Fortunato, M. Camalleri, A. Magrì, F. Simon, B.G. Svensson

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 454 KB

english, 2004

10

Integration of Melting Excimer Laser Annealing in Power MOS Technology

Privitera, V., La Magna, A., Spinella, C., Fortunato, G., Mariucci, L., Cuscuna, M., Camalleri, C.M., Magri, A., La Rosa, G., Svensson, B.G., Monakhov, E.V., Simon, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.02 MB

english, 2007

11

Nitrogen Bonding Configurations of SiO[sub x]N[sub y] Thin Films in Power MOSFET Gate Interfaces

Fazio, E., Monforte, F., Neri, F., Bonsignore, F., Curro, G., Camalleri, M., Cali, D.

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 161 KB

english, 2008

12

Reoxidization Process Effects on the Nitrogen Bonding Configurations in SiO[sub x]N[sub y] Power MOSFET Dielectric Gate

Fazio, E., Monforte, F., Neri, F., Bonsignore, F., Curro, G., Camalleri, M., Cali, D.

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 145 KB

english, 2008

13

Excimer Laser annealing for shallow junction formation in Si power MOS devices

G. Fortunato, V. Privitera, A. La Magna, L. Mariucci, M. Cuscunà, B.G. Svensson, E. Monakhov, M. Camalleri, A. Magrì, D. Salinas, F. Simon

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

14

X-ray-photoemission-spectroscopy evidence for anomalous oxidation states of silicon after exposure of hydrogen-terminated single-crystalline (100) silicon to a diluted N2 : N2O atmosphere

Cerofolini, G F, Galati, C, Renna, L, Viscuso, O, Camalleri, M, Lorenti, S, Condorelli, G G, Fragalà, I L

Journal:

Journal of Physics D Applied Physics

Year:

2002

Language:

english

File:

PDF, 351 KB

english, 2002

15

Surface photovoltage measurements for Cu, Ti and W determination in Si wafers

D. Cali, C.M. Camalleri, V. Raineri

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 183 KB

english, 2001

16

A hybrid approach to nanoelectronics

Cerofolini, G F, Arena, G, Camalleri, C M, Galati, C, Reina, S, Renna, L, Mascolo, D

Journal:

Year:

2005

Language:

english

File:

PDF, 1.38 MB

english, 2005

17

Structural and electrical investigation of high temperature annealed As-implanted Si crystals

C. Bocchi, L. Felisari, A. Catellani, G. Cicero, F. Germini, E. Gombia, R. Mosca, L. Nasi, E. K. Mukhamedzhanov, M. A. Chuev, V. Privitera, M. Camalleri, D. Calì

Year:

2005

Language:

english

File:

PDF, 902 KB

english, 2005

18

Material modifications induced by laser annealing in two-dimensional structures

A. La Magna, P. Alippi, V. Privitera, S. Scalese, S. Pannitteri, G. Fortunato, L. Mariucci, M. Camalleri

Year:

2004

Language:

english

File:

PDF, 538 KB

english, 2004

19

Ion implantation and diffusion of Al in a SiO2Si system

A. La Ferla, G. Galvagno, S. Rinaudo, V. Raineri, G. Franco, M. Camalleri, A. Gasparotto, A. Carnera, E. Rimini

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 432 KB

english, 1996

20

[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Electrical activation of B implanted in silicon at energies below 1 keV

Privitera, V., Napolitani, E., Priolo, F., Mannino, G., Settanni, C., Camalleri, M., Rimini, E.

Year:

2000

Language:

english

File:

PDF, 382 KB

english, 2000

21

[IEEE Displays conference and Exhibition - Phoenix, AZ, USA (2008.01.21-2008.01.24)] 2008 Flexible Electronics and Displays Conference and Exhibition - Materials and processing issues for the manufacturing of integrated passive and active devices on flexible substrates

Ravesi, S., Alessandrino, S., Bassi, A., Cafra, B., Camalleri, M., Caristia, L., Coffa, S., Di Marco, S., Di Stefano, M., Fortunato, G., Verso, S. Lo, Mangano, F., Pecora, A., Pignataro, B., Privitera

Year:

2008

Language:

english

File:

PDF, 1020 KB

english, 2008

22

Charge transport in ultrathin silicon rich oxide/SiO[sub 2] multilayers under solar light illumination and in dark conditions

Puglisi, R. A., Vecchio, C., Lombardo, S., Lorenti, S., Camalleri, M. C.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1014 KB

english, 2010

23

Strategies for nanoelectronics

G.F. Cerofolini, G. Arena, M. Camalleri, C. Galati, S. Reina, L. Renna, D. Mascolo, V. Nosik

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 704 KB

english, 2005

24

Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes

Magna, Antonino La, Alippi, Paola, Privitera, Vittorio, Fortunato, Guglielmo, Camalleri, Marco, Svensson, Bengt

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 268 KB

english, 2004

25

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA, United States (Monday 26 January 2004)] Light-Emitting Diodes: Research, Manufacturing, and Applications VIII - Si-based resonant cavity light-emitting devices

Castagna, Maria Eloisa, Stockman, Steve A., Yao, H. Walter, Coffa, Salvatore, Muscara, Anna, Schubert, E. Fred, Costa, Alessandro, Ravesi, Sebastiano, Lorenti, Simona, Camalleri, Marco

Year:

2004

Language:

english

File:

PDF, 453 KB

english, 2004

26

Evidence for the precursors of nitrided silicon in the early stages of silicon oxynitridation in N[sub 2]:N[sub 2]O atmosphere

Cerofolini, G. F., Camalleri, M., Galati, C., Lorenti, S., Renna, L., Viscuso, O., Condorelli, G. G., Fragalà, I. L.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

27

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - Surface and interface roughness after thermal oxidation of As, B and Si implanted silicon wafers

Raineri, V., Iacona, F., La Via, F., Camalleri, C.M., Rimini, E.

Year:

1997

Language:

english

File:

PDF, 562 KB

english, 1997

28

Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements

Raineri, Vito, Cali, D., Camalleri, M., Di Dio, M., Puglisi, A.

Journal:

Solid State Phenomena

Year:

1999

File:

PDF, 625 KB

1999

29

Computational methods for the simulation of the excimer laser annealing in MOS technology

Antonino La Magna, Paola Alippi, G. Mannino, Vittorio Privitera, Guglielmo Fortunato, Luigi Mariucci, Marco Camalleri, Edouard Monakhov, Bengt Svensson

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 148 KB

english, 2004

30

Low-Temperature Annealing Combined with Laser Crystallization for Polycrystalline Silicon TFTs on Polymeric Substrate

Privitera, V., Scalese, S., La Magna, A., Pecora, A., Cuscunà, M., Maiolo, L., Minotti, A., Simeone, D., Mariucci, L., Fortunato, G., Caristia, L., Mangano, F., Di Marco, S., Camalleri, M., Ravesi, S

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 678 KB

english, 2008

31

The Early Oxynitridation Stages of Hydrogen-Terminated Single-Crystalline Silicon in N2O Ambient

Cerofolini, G. F., Camalleri, M., Condorelli, G. G., Fragalà, I. L., Galati, C., Lorenti, S., Renna, L., Viscuso, O.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 146 KB

english, 2000

32

The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states

G.F. Cerofolini, C. Bongiorno, M. Camalleri, G.G. Condorelli, I.L. Fragalà, C. Galati, S. Lorenti, L. Renna, C. Spinella, O. Viscuso

Journal:

Applied Physics A: Materials Science & Processing

Year:

2002

Language:

english

File:

PDF, 161 KB

english, 2002

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